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MRF5S21100HR3 mrf5s21100hsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for w - cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier w - cdma performance: v dd = 28 volts, i dq = 1050 ma, p out = 23 watts avg., full frequency band, channel bandwidth = 3.84 mhz, peak/avg. = 8.5 db @ 0.01% probability on ccdf. power gain ? 13.5 db drain efficiency ? 26% im3 @ 10 mhz offset ? - 37 dbc @ 3.84 mhz channel bandwidth acpr @ 5 mhz offset ? - 40 dbc @ 3.84 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 100 watts cw output power ? characterized with series equivalent large - signal impedance parameters ? internally matched, controlled q, for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? lower thermal resistance package ? low gold plating thickness on leads, 40 ? nominal. ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 273 1.56 w w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 100 w cw case temperature 78 c, 23 w cw r jc 0.57 0.64 c/w 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 2. refer to an1955/d, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. mrf5s21100h rev. 2, 1/2005 freescale semiconductor technical data MRF5S21100HR3 mrf5s21100hsr3 2170 mhz, 23 w avg., 28 v 2 x w - cdma lateral n - channel rf power mosfets case 465 - 06, style 1 ni - 780 MRF5S21100HR3 case 465a - 06, style 1 ni - 780s mrf5s21100hsr3 ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor MRF5S21100HR3 mrf5s21100hsr3 table 3. esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) charge device model c7 (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 0.5 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 250 adc) v gs(th) 2.5 2.8 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1050 madc) v gs(q) ? 3.8 ? vdc drain- source on - voltage (v gs = 10 vdc, i d = 2.5 adc) v ds(on) ? 0.24 0.3 vdc forward transconductance (v ds = 10 vdc, i d = 2.5 adc) g fs ? 6 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.14 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1050 ma, p out = 23 w avg., f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz, 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. peak/avg. = 8.5 db @ 0.01% probability on ccdf. power gain g ps 12.5 13.5 ? db drain efficiency d 24 26 ? % intermodulation distortion im3 ? -37 -35 dbc adjacent channel power ratio acpr ? -40 -38 dbc input return loss irl ? -16 -9 db 1. part is internally matched both on input and output.
MRF5S21100HR3 mrf5s21100hsr3 3 rf device data freescale semiconductor figure 1. MRF5S21100HR3(sr3) test circuit schematic r2 v bias v supply c11 c8 c7 c5 c14 c3 c10 c1 rf output rf input r1 z1 z2 z3 z4 z5 z6 z7 z9 z8 z16 z10 z11 z12 z15 z17 + z10 0.368 x 1.136 microstrip z11 0.151 x 0.393 microstrip z12 0.280 x 0.220 microstrip z13 0.481 x 0.142 microstrip z14 0.138 x 0.080 microstrip z15 0.344 x 0.080 microstrip z16 0.147 x 0.099 microstrip z17 0.859 x 0.080 microstrip pcb arlon gx - 0300- ss - 22, 0.030 , r = 2.55 z1 0.674 x 0.080 microstrip z2 0.421 x 0.080 microstrip z3 0.140 x 0.080 microstrip z4 1.031 x 0.080 microstrip z5 0.380 x 0.643 microstrip z6 0.080 x 0.643 microstrip z7 0.927 x 0.048 microstrip z8 0.620 x 0.048 microstrip z9 0.079 x 1.136 microstrip dut b1 r3 c4 c13 c15 z13 z14 c2 c6 w1 r4 c12 + c9 table 5. MRF5S21100HR3(sr3) test circuit component designations and values part description part number manufacturer b1 short rf bead 95f786 newark c1, c2 8.2 pf chip capacitors 100b8r2cp500x atc c3 5.6 pf chip capacitor 100b5r6cp500x atc c4 0.1 f chip capacitor c1210c104j5rac kemet c5, c7 7.5 pf chip capacitors 100b7r5jp500x atc c6 1.2 pf chip capacitor 100b1r2bp500x atc c8 1k pf chip capacitor 100b102jp500x atc c9, c10 0.56 f chip capacitors c1825c564j5rac kemet c11 470 f, 63 v electrolytic capacitor 95f4579 newark c12 100 f, 50 v electrolytic capacitor 51f2913 newark c13 0.6 - 4.5 pf gigatrim variable capacitor 44f3358 newark c14 2.7 pf chip capacitor 100b2r7cp500x atc c15 0.4 - 2.5 pf gigatrim variable capacitor 44f3367 newark r1 1 k chip resistor d5534m07b1k00r newark r2 560 k chip resistor cr1206564jt newark r3, r4 12 chip resistors rm73b2b120jt garrett electronics
4 rf device data freescale semiconductor MRF5S21100HR3 mrf5s21100hsr3 b1 r2 c4 c12 c9 c3 c10 c5 c11 c6 c7 c8 w1 r4 c15 c14 c13 c1 r3 r1 c2 figure 2. MRF5S21100HR3(sr3) test circuit component layout cut out area v gg v dd mrf5s21100l rev 03 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
MRF5S21100HR3 mrf5s21100hsr3 5 rf device data freescale semiconductor typical characteristics 42 48 56 34 p3db = 51.88 dbm (154.17 w) v dd = 28 vdc, i dq = 1050 ma pulsed cw, 8 sec(on), 1msec(off) center frequency = 2140 mhz actual ideal p1db = 51.18 dbm (131.22 w) 55 53 52 50 49 36 37 38 41 40 54 51 35 39 5 15 2040 ?45 40 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier w - cdma broadband performance g ps , power gain (db) v dd = 28 vdc, p out = 23 w (avg.), i dq = 1050 ma 2?carrier w?cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth peak/avg. = 8.5 db @ 0.01% probability (ccdf) im3 (dbc), acpr (dbc) ?50 ?10 ?20 ?30 ?40 input return loss (db) irl, 0 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240 14 35 13 30 12 25 11 20 10 ?20 9 ?25 8 ?30 7 ?35 6 ?40 100 11 16 1 i dq = 1400 ma 650 ma p out , output power (watts) pep figure 4. two - tone power gain versus output power g ps , power gain (db) v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing 1050 ma 850 ma 1250 ma 15 14 13 12 10 100 ?55 ?15 1 p out , output power (watts) pep figure 5. third order intermodulation distortion versus output power imd, third order intermodulation distortion (dbc) v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing i dq = 1400 ma 650 ma 1050 ma 850 ma 1250 ma ?20 ?25 ?30 ?35 ?40 ?45 ?50 10 10 ?60 ?20 1 7th order two?tone spacing (mhz) figure 6. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, v dd = 28 vdc, p out = 100 w (pep), i dq = 1050 ma two?tone measurements, center frequency = 2140 mhz 5th order 3rd order 0.1 ?25 ?30 ?35 ?40 ?45 ?50 ?55 p in , input power (dbm) figure 7. pulse cw output power versus input power p out , output power (dbm) d d , drain efficiency (%)
6 rf device data freescale semiconductor MRF5S21100HR3 mrf5s21100hsr3 typical characteristics 0 40 1 ?55 ?15 g ps acpr im3 p out , output power (watts) avg. w?cdma figure 8. 2 - carrier w - cdma acpr, im3, power gain and drain efficiency versus output power im3 (dbc), acpr (dbc) v dd = 28 vdc, i dq = 1050 ma f1 = 2135 mhz, f2 = 2145 mhz 2x w?cdma, 10 mhz @ 3.84 mhz channel bandwidth peak/avg. = 8.5 db @ 0.01% probability (ccdf) 35 ?20 30 ?25 25 ?30 20 ?35 15 ?40 10 ?45 5 ?50 10 d d , drain efficiency (%), g ps , power gain (db) 220 10 9 100 10 8 10 7 10 6 120 140 160 180 200 t j , junction temperature ( c) figure 9. mttf factor versus junction temperatur e this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. mttf factor (hours x amps 2 ) typical characteristics w - cdma test signal 10 0.0001 100 0 peak?to?average (db) figure 10. ccdf w - cdma 3gpp, test model 1, 64 dpch, 67% clipping, single carrier test signal probability (%) 10 1 0.1 0.01 0.001 24 68 figure 11. 2-carrier w-cdma spectrum f, frequency (mhz) ?110 ?120 ?70 ?20 ?80 ?60 ?50 (db) ?90 ?100 ?40 ?30 3.84 mhz channel bw ?im3 @ 3.84 mhz bw +im3 @ 3.84 mhz bw ?acpr @ 3.84 mhz bw +acpr @ 3.84 mhz bw 20 515 10 0 ?5 ?10 ?15 ?20 ?25 25
MRF5S21100HR3 mrf5s21100hsr3 7 rf device data freescale semiconductor figure 12. series equivalent source and load impedance f mhz z source ? z load ? 2100 2120 2160 1.2 - j2.1 2.2 - j3.0 1.4 - j2.3 3.4 - j7.2 3.4 - j6.5 4.9 - j7.0 v dd = 28 vdc, i dq = 1050 ma, p out = 23 w avg. z o = 10 ? z load f = 2100 mhz f = 2200 mhz z source f = 2100 mhz f = 2200 mhz 2200 1.7 - j2.1 3.4 - j8.6 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor MRF5S21100HR3 mrf5s21100hsr3 notes
MRF5S21100HR3 mrf5s21100hsr3 9 rf device data freescale semiconductor notes
10 rf device data freescale semiconductor MRF5S21100HR3 mrf5s21100hsr3 notes
MRF5S21100HR3 mrf5s21100hsr3 11 rf device data freescale semiconductor package dimensions case 465 - 06 issue f ni - 780 MRF5S21100HR3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) case 465a - 06 issue f ni - 780s mrf5s21100hsr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator)
12 rf device data freescale semiconductor MRF5S21100HR3 mrf5s21100hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com mrf5s21100h rev. 2, 1/2005 document number:

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